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Ambipolar behavior of Te and its effect on the optical emission of ZnO:Te epitaxial thin film
Author(s) -
Sahu R.,
Dileep K.,
Negi D. S.,
Nagaraja K. K.,
Datta R.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451443
Subject(s) - ambipolar diffusion , bowing , epitaxy , band gap , materials science , pulsed laser deposition , thin film , condensed matter physics , optoelectronics , vacancy defect , electronic band structure , nanotechnology , physics , electron , philosophy , theology , layer (electronics) , quantum mechanics
We present control over the ambipolar nature of Te in ZnO and the corresponding optical band gap in epitaxial thin film grown by pulsed laser deposition. Experimentally, the decrease in band gap is found to be strongly dependent on the Te concentration for Te O compared to Te Zn . Emission at 3 eV for Te Zn , irrespective of Te content is explained by first principle calculation considering Zn vacancy in the lattice. An experimental band bowing parameter of ∼7 eV is obtained for Te O and is in agreement with modified Becke–Johnson potential (mBJLDA) based theoretical calculation. The physical insight into the nature of band bowing is elucidated.