Photoemission investigation of the Schottky barrier at the Sc/3C‐SiC (111) interface | Zendy

King Sean W. | Zendy; Nemanich Robert J. | Zendy; Davis Robert F. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Photoemission investigation of the Schottky barrier at the Sc/3C‐SiC (111) interface

Author(s) -

King Sean W.,

Nemanich Robert J.,

Davis Robert F.

Publication year - 2015

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.201451340

Subject(s) - x ray photoelectron spectroscopy , schottky barrier , band bending , materials science , low energy electron diffraction , analytical chemistry (journal) , photoemission spectroscopy , electron diffraction , schottky diode , diffraction , evaporation , layer (electronics) , chemistry , nanotechnology , optics , optoelectronics , nuclear magnetic resonance , physics , diode , chromatography , thermodynamics

The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C‐SiC (111)‐(1x1) surfaces at 600 °C has been investigated using in situ X‐ray and ultra‐violet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two‐dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of ∼2 nm beyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C‐SiC (111)‐(1x1) surface to form a ScSi x and ScC x interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ∼0.5 eV of upward band bending resulting in a Schottky barrier of 0.65 ± 0.15 eV.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research