Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO 2  gate dielectric films | Zendy

Xiong Yuhua | Zendy; Tu Hailing | Zendy; Du Jun | Zendy; Wang Ligen | Zendy; Wei Feng | Zendy; Chen Xiaoqiang | Zendy; Yang Mengmeng | Zendy; Zhao Hongbin | Zendy; Chen Dapeng | Zendy; Wang Wenwu | Zendy

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Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO 2 gate dielectric films

Author(s) -

Xiong Yuhua,

Tu Hailing,

Du Jun,

Wang Ligen,

Wei Feng,

Chen Xiaoqiang,

Yang Mengmeng,

Zhao Hongbin,

Chen Dapeng,

Wang Wenwu

Publication year - 2014

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.201451303

Subject(s) - doping , materials science , band offset , oxygen , dielectric , band gap , condensed matter physics , conduction band , offset (computer science) , electronic band structure , optoelectronics , valence band , chemistry , physics , electron , computer science , organic chemistry , quantum mechanics , programming language

The interaction of Gd and N incorporation on the band gap, band offset, and oxygen vacancies of HfO 2 high‐ k gate dielectric films has been investigated. The results show that introducing N (9.7% and 17.4%) and Gd into HfO 2 does not dramatically reduce the band gap due to the counteracting effect of Gd doping. Most importantly, Gd and N co‐doping increases the conduction band offset of HfO 2 and leads to a much better band offset symmetry compared to undoped or Gd‐monodoped HfO 2 . Compared with Gd, N plays a more significant role in improving the band‐offset symmetry. The oxygen vacancies are greatly suppressed by Gd and N co‐doping under the suitable doping amounts.

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