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Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO 2 gate dielectric films
Author(s) -
Xiong Yuhua,
Tu Hailing,
Du Jun,
Wang Ligen,
Wei Feng,
Chen Xiaoqiang,
Yang Mengmeng,
Zhao Hongbin,
Chen Dapeng,
Wang Wenwu
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451303
Subject(s) - doping , materials science , band offset , oxygen , dielectric , band gap , condensed matter physics , conduction band , offset (computer science) , electronic band structure , optoelectronics , valence band , chemistry , physics , electron , computer science , organic chemistry , quantum mechanics , programming language
The interaction of Gd and N incorporation on the band gap, band offset, and oxygen vacancies of HfO 2 high‐ k gate dielectric films has been investigated. The results show that introducing N (9.7% and 17.4%) and Gd into HfO 2 does not dramatically reduce the band gap due to the counteracting effect of Gd doping. Most importantly, Gd and N co‐doping increases the conduction band offset of HfO 2 and leads to a much better band offset symmetry compared to undoped or Gd‐monodoped HfO 2 . Compared with Gd, N plays a more significant role in improving the band‐offset symmetry. The oxygen vacancies are greatly suppressed by Gd and N co‐doping under the suitable doping amounts.