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Self‐consistent analysis of InAsSb quantum‐well heterostructures
Author(s) -
Zhang Yuwei,
Zhang Yang,
Guan Min,
Cui Lijie,
Wang Chengyan,
Zeng Yiping
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451300
Subject(s) - heterojunction , quantum well , condensed matter physics , scattering , materials science , optoelectronics , quantum , poisson's equation , electron , physics , quantum mechanics , laser
Based on our self‐consistent calculation of the Schrödinger–Poisson equation by taking into consideration both the strain effect and the nonparabolicity effect, we propose a material design for InAsSb‐based quantum‐well heterostructures. A two‐dimensional electron gas concentration exceeding 3 × 10 12 cm −2 could be achieved within AlSb/InAs 0.4 Sb 0.6 heterostructures without the occurrence of intersubband scattering, higher than that in AlSb/InAs heterostructures. Our InAsSb‐based quantum‐well heterostructure is proved to be advantageous for applications as high electron mobility transistors.