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Detailed photoluminescence study of vapor deposited Bi 2 S 3 films of different surface morphology
Author(s) -
Sträter Hendrik,
ten Haaf Sebastian,
Brüggemann Rudolf,
Jakob Gerhard,
Nilius Niklas,
Bauer Gottfried H.
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451271
Subject(s) - photoluminescence , materials science , semiconductor , band gap , radiative transfer , fermi level , thin film , absorption (acoustics) , optics , optoelectronics , condensed matter physics , nanotechnology , physics , composite material , quantum mechanics , electron
authorenWe present a temperature‐ and intensity‐dependent photoluminescence (PL) study of the binary semiconductor Bi 2 S 3 on the mm‐scale and a laterally resolved PL measurement with a resolution of x ≈ 900 nm. The films can show a rather rough surface with needles and flakes of Bi 2 S 3 with different orientations as well as very flat and smooth surface morphology. Despite a band gap of E g ≈ 1.3 eV the films show a splitting of quasi‐Fermi levels (QFL) of μ ≈ 700 meV at room temperature. By means of temperature‐dependent PL we have located several radiative and non‐radiative defect states in the band gap. For a better understanding of this thin film semiconductor a full analysis of the laterally resolved PL measurement including the integrated PL yield, energetic position of the PL maximum, optical band gap, splitting of quasi‐Fermi levels and defect absorption of both sample morphologies is presented to avoid misinterpretation of experimental data.