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Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution
Author(s) -
Tischer Ingo,
Frey Manuel,
Hocker Matthias,
Jerg Lisa,
Madel Manfred,
Neuschl Benjamin,
Thonke Klaus,
Leute Robert A.R.,
Scholz Ferdinand,
Groiss Heiko,
Müller Erich,
Gerthsen Dagmar
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451252
Subject(s) - cathodoluminescence , stacking , materials science , stacking fault , basal plane , optoelectronics , transmission electron microscopy , wide bandgap semiconductor , layer (electronics) , crystallography , luminescence , dislocation , nanotechnology , chemistry , composite material , organic chemistry
We investigate the optical and structural properties of an AlGaN layer with low Al content grown on a { 1 1 ‾ 01 } semipolar GaN facet. The correlation of scanning transmission electron microscopy with high‐resolution cathodoluminescence recorded on the identical sample spot allows to identify the emission features of AlGaN defects. We assign a basal plane stacking fault of I 1 type to a spatially localized emission 80 meV below the ( D 0 X ) in AlGaN. This defect starts inside the GaN template and continues through the AlGaN layer. The energy spacing between the ( D 0 X ) related emission band and the corresponding I 1 ‐type basal plane stacking fault emission is larger than in the binary GaN case which indicates a modified Al content at the defect.