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Origin of slow low‐temperature luminescence in undoped and Ce‐doped Y 2 SiO 5 and Lu 2 SiO 5 single crystals
Author(s) -
Jary V.,
Krasnikov A.,
Nikl M.,
Zazubovich S.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451234
Subject(s) - luminescence , doping , kinetics , materials science , quantum tunnelling , excitation , analytical chemistry (journal) , atmospheric temperature range , absorption (acoustics) , exponential decay , atomic physics , chemistry , optoelectronics , physics , chromatography , quantum mechanics , nuclear physics , composite material , meteorology
At 4.2–300 K, the steady‐state and time‐resolved emission and excitation spectra as well as the luminescence decay kinetics in the 10 μs–10 s time range are studied for the undoped and Ce 3+ ‐doped single crystals of Y 2 SiO 5 and Lu 2 SiO 5 . At low temperatures, a broad intrinsic emission band located at 2.55 eV in Y 2 SiO 5 and 2.58 eV in Lu 2 SiO 5 is observed in the luminescence spectra of all the crystals studied under excitation in the charge‐transfer absorption region (with E exc > 4.2 eV). This emission reveals the slow non‐exponential decay kinetics characteristic for tunneling recombination processes. In the slow decay kinetics of the low‐temperature luminescence of Ce 3+ ‐doped crystals, both the multi‐exponential and the non‐exponential decay stages are detected. The origin of the defects, responsible for the undesirable slow low‐temperature luminescence of the undoped and Ce 3+ ‐doped Y 2 SiO 5 and Lu 2 SiO 5 crystals is considered. A new mechanism of the processes, resulting in the appearance of different luminescence decay stages, is proposed.