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Si‐related color centers in nanocrystalline diamond thin films
Author(s) -
Potocký Štěpán,
Holovský Jakub,
Remeš Zdeněk,
Müller Martin,
Kočka Jan,
Kromka Alexander
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451177
Subject(s) - materials science , raman spectroscopy , nanocrystalline material , diamond , photoluminescence , chemical vapor deposition , scanning electron microscope , substrate (aquarium) , thin film , spectroscopy , plasma enhanced chemical vapor deposition , optoelectronics , molybdenum , analytical chemistry (journal) , chemical engineering , nanotechnology , optics , composite material , metallurgy , chemistry , oceanography , physics , chromatography , quantum mechanics , geology , engineering
The successful growth of nanocrystalline diamond (NCD) thin films with optically active Si‐related color centers was realized on glass and molybdenum substrates by the microwave plasma chemical vapor deposition (CVD) with focused or linear antenna plasma reactors. Diamond coatings were characterized by Raman spectroscopy, scanning electron microscopy, and photoluminescence (PL) spectroscopy. Increased of a‐Si interlayer thickness resulted in reduction of stress in NCD film and increased renucleation of NCD films. The PL spectra showed that the Si‐color center is only observed in the focused plasma system. The influence of the substrate material as well as the a‐Si interlayer on the density of Si‐related color center was not confirmed in our setup.