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Two‐band conduction in electron‐irradiated n‐InSe single crystals
Author(s) -
Mintyanskii I. V.,
Savitskii P. I.,
Kovalyuk Z. D.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451146
Subject(s) - electron , thermal conduction , conduction band , acceptor , materials science , condensed matter physics , irradiation , atmospheric temperature range , quasi fermi level , redistribution (election) , electron mobility , fermi level , atomic physics , physics , thermodynamics , quantum mechanics , politics , political science , nuclear physics , law , composite material
The electrical properties of n‐InSe single crystals irradiated with 9.2‐MeV electrons are investigated in the temperature range 80–400 K. The observed extrema in the temperature dependences of the Hall coefficient and the electron mobility are explained by assuming the existence of mixed conduction with the carriers in the 3D conduction band and 2D electron gas. The numerical calculations were carried out by taking into account a redistribution of the carriers between the conduction band and the states of a 2D electron gas and well reproduce the experimental data. A numerical analysis of the temperature dependences of the concentration of 3D electrons within the single donor – single acceptor model and that of the Fermi‐level temperature dependences have shown that n‐InSe irradiated with high‐energy electrons is highly compensated ( N A / N D = 0.988–0.998) with a concentration of the donors N D = (0.69–1.2) × 10 17 cm −3 and the activation energy of three‐dimensional conduction is 93–139 meV.