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Optical and magnetic resonance study of a‐SiC x N y films obtained by magnetron sputtering
Author(s) -
Savchenko Dariya,
Kulikovsky Valeriy,
Vorlíček Vladimir,
Lančok Jan,
Kiselov Vitalii,
Kalabukhova Ekaterina
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451041
Subject(s) - electron paramagnetic resonance , dangling bond , antiferromagnetism , raman spectroscopy , sputter deposition , materials science , unpaired electron , analytical chemistry (journal) , delocalized electron , resonance (particle physics) , silicon , nuclear magnetic resonance , thin film , condensed matter physics , crystallography , chemistry , sputtering , atomic physics , optics , nanotechnology , optoelectronics , physics , chromatography , organic chemistry
Amorphous silicon carbonitride (a‐SiC x N y ) thin films deposited on the SiO 2 substrates by reactive magnetron sputtering was studied by Raman and electron paramagnetic resonance (EPR) spectroscopy. Raman analysis indicates the presence of C–N, Si–N, C–C bonds in a‐SiC x N y films. Three EPR signals were revealed in a‐SiC x N y /SiO 2 . One of them with g = 2.0033 was attributed to the carbon‐dangling bonds (CDB). Based on the lineshape and linewidth, the EPR signal was attributed to the unpaired electron delocalized over sp 2 carbon cluster. With the increase of nitrogen (N) content, the spin density of CDB significantly increases. From the temperature dependence of the linewidth and integral intensity of the CDB EPR signal, it was concluded that the antiferromagnetic ordering occurs in spin system. The antiferromagnetic exchange constant between CDBs was found to be J = −32 K. The second EPR signal having g = 2.009 was attributed to the interface defect representing threefold‐coordinated Si dangling bond, which may appear due to the formation of the oxidized Si on the film surface. The third EPR signal with g = 2.05 was tentatively attributed to the trapped holes at Si atom near Si/SiO 2 interface. The N incorporation in a‐SiC x /SiO 2 has no effect on the spin density of both interface defects.