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High‐pressure induced phase formation in the CuGaS 2 –CuGaO 2 chalcopyrite–delafossite system
Author(s) -
Salak Andrei N.,
Zhaludkevich Aleksandr L.,
Ignatenko Oleg V.,
Lisenkov Aleksey D.,
Yaremchenko Aleksey A.,
Zheludkevich Mikhail L.,
Ferreira Mário G. S.
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451013
Subject(s) - delafossite , chalcopyrite , phase (matter) , high pressure , materials science , chemistry , metallurgy , physics , copper , thermodynamics , organic chemistry , oxide
Phase formation under high pressure in the chalcopyrite–delafossite system has been studied at 5 GPa and 500–1000 °C. The parent chalcopyrite composition used in this study was slightly Cu‐deficient, corresponding to the chemical formula (Cu,Ga) 0.905 GaS 2 . It was revealed that under high‐pressure and high‐temperature conditions, a mixture of the parent phases partly decomposes to form Cu 2 S and Ga 2 O 3 . The defect chalcopyrite (Cu,Ga) 0.905 GaS 2 splits into a near‐stoichiometric CuGaS 2 and a Cu‐deficient cubic (sphalerite‐like) phase of the (Cu,Ga) 0.8 S composition. Such a phenomenon has been considered in terms of characteristic features of chalcopyrite and sphalerite crystal structures. Delafossite CuGaO 2 at 5 GPa and 1000 °C was found to recrystallize entirely, which results in the disappearance of the stacking faults in its layered structure.