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Defect studies on Ar‐implanted ZnO thin films
Author(s) -
Schmidt Florian,
Müller Stefan,
Pickenhain Rainer,
von Wenckstern Holger,
Geburt Sebastian,
Ronning Carsten,
Grundmann Marius
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451011
Subject(s) - materials science , annealing (glass) , thin film , deep level transient spectroscopy , ion implantation , optoelectronics , ion , crystallographic defect , analytical chemistry (journal) , silicon , metallurgy , nanotechnology , chemistry , crystallography , organic chemistry , chromatography
Pulsed‐laser deposited ZnO thin films were implanted with Ar‐ions to generate intrinsic defects within the material. The defects created were analyzed by deep‐level and optical deep‐level transient spectroscopy. Deep‐level defects with thermal activation energies of 980 and 1300me V appear after implantation. In order to study the annealing behavior of these defects, the implanted samples were isochronously annealed under an oxygen ambient of 700 mbar at temperatures ranging from 120 to 660 deg C . Both defects are annealed out after annealing for 1 h at 660 deg C . (O)DLTS signal of an 40 Ar‐implanted ZnO thin film under (a) dark condition and (b) under illumination with photons having a wavelength ν of 1064 nm .