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Observation of picosecond electron spin relaxation in InGaAsP by time‐resolved spin‐dependent pump and probe reflection measurement
Author(s) -
Harasawa Ryo,
Yamamoto Naoki,
Wu Hao,
Aritake Takanori,
Lu Shulong,
Ji Lian,
Tackeuchi Atsushi
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201400321
Subject(s) - picosecond , relaxation (psychology) , spin (aerodynamics) , condensed matter physics , electron , reflection (computer programming) , chemistry , spin polarization , materials science , optics , physics , laser , psychology , social psychology , quantum mechanics , computer science , thermodynamics , programming language
We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time‐resolved spin‐dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300 K. We have observed the electron spin relaxation times of 980 ps at 10 K and 95 ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir–Aronov–Pikus (BAP) process is effective at 10–30 K. At 100–300 K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov–Perel' (DP) and Elliott–Yafet (EY) processes are effective.