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Enhanced radiation hardness of InAs/InP quantum wires
Author(s) -
Sobolev Nikolai A.,
Santos Nuno M.,
Leitão Joaquim P.,
Carmo Maria C.,
Fuster David,
González Luisa,
González Yolanda,
Wesch Werner
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201400163
Subject(s) - photoluminescence , irradiation , materials science , wavelength , proton , radiation , excitation , optoelectronics , quantum , thermal stability , excitation wavelength , luminescence , band gap , thermal , extinction (optical mineralogy) , condensed matter physics , optics , chemistry , physics , organic chemistry , quantum mechanics , meteorology , nuclear physics
We report the influence of 2.4 MeV proton irradiation on the photoluminescence (PL) of self‐assembled InAs/InP quantum wires (QWRs) and quantum wells (QWs), which show PL emission at similar wavelengths. The proton irradiation leads to an extinction of the PL intensity and to a deterioration of the thermal stability of the PL both in QWR and QW samples. However, the QWRs tend to exhibit higher radiation hardness, especially at low temperatures and upon just above‐bandgap excitation.