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Kinetics study of vacancy–oxygen‐related defects in monocrystalline solar silicon
Author(s) -
Quemener V.,
Raeissi B.,
Herklotz F.,
Murin L. I.,
Monakhov E. V.,
Svensson B. G.
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201400155
Subject(s) - monocrystalline silicon , vacancy defect , silicon , materials science , oxygen , dissociation (chemistry) , isothermal process , diffusion , chemical physics , kinetics , crystallographic defect , irradiation , annealing (glass) , analytical chemistry (journal) , photochemistry , chemistry , crystallography , thermodynamics , optoelectronics , metallurgy , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics
In this work, diffusion and dissociation mechanisms related to the formation and evolution of vacancy–oxygen complexes have been studied. Czochralski‐grown silicon samples have been irradiated at room temperature using fast electrons resulting in the formation of several defects including vacancy–oxygen complexes (VOn ). The samples were isothermally annealed at different temperatures in the range of 370–470 ∘ C. Fourier‐transform infrared spectroscopy has been employed to measure the local vibrational modes associated with the individual defects. The evolution and generation kinetics of vacancy–oxygen complexes have been simulated within the framework of the theory for diffusion‐limited reactions and compared with the experimental data.