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Electron emission from silicon and germanium after swift heavy ion impact
Author(s) -
Rymzhanov R. A.,
Medvedev N. A.,
Volkov A. E.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201400130
Subject(s) - swift heavy ion , atomic physics , germanium , electron , ion , silicon , semiconductor , monte carlo method , spectral line , electron excitation , physics , materials science , nuclear physics , fluence , optoelectronics , statistics , mathematics , quantum mechanics , astronomy
The presented Monte Carlo model simulates excitation of the electron subsystem of semiconductors by a penetrating swift heavy ion (SHI). The cross sections of interaction of an ion with the electron subsystem of a target are calculated via the complex dielectric function formalism, which accounts for all the collective modes of the electron ensemble of the target. The predicted electron inelastic mean free paths are in a very good agreement with those from the NIST database. The calculated SHI energy losses coincide well with SRIM and CasP codes. The model is used to calculate the spectra of electrons emitted from germanium and silicon targets during SHI irradiation. These spectra agree well with the experimental data.