Premium
Infrared defect dynamics: He irradiation induced complexes in high‐quality silicon crystal
Author(s) -
Inoue Naohisa,
Goto Yasunori,
Sugiyama Takahide,
Watanabe Kaori,
Seki Hirofumi,
Kawamura Yuichi
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201400038
Subject(s) - irradiation , absorbance , electron beam processing , silicon , electron , crystal (programming language) , analytical chemistry (journal) , annealing (glass) , infrared spectroscopy , materials science , chemistry , crystallography , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , computer science , nuclear physics , composite material , programming language
The behavior of radiation‐induced complexes in MCZ silicon crystal after He irradiation was studied by highly sensitive and accurate infrared absorption spectroscopy. Samples from the same crystal that was used in the electron irradiation were employed. Many absorption lines with peak absorbance as small as 10 −6 were successfully detected. Most of them were the same as those that had been observed in the electron irradiated samples and reported in the previous papers. Not only C‐rich type complexes such as C i O i and IC i O i , but also C‐lean type complexes such as I 2 O 2 i and IO 3 i were observed, in contrast to the electron case where only C‐rich type had been observed in the same crystal. Peak absorbances for the He case are about half of those in the electron case. The He dose was 5 × 10 13 cm −2 , 1/200 of the electron dose of 10 16 cm −2 . Thus, the complex production rate per particle in the He case was about 100 times as large as that for electrons. The production range in the He case was restricted to within 20 microns from the surface. This range amounted to about 1/100 of that observed in the electron case where complexes had been formed uniformly throughout the 2 mm thick sample. Also, therefore, the complex concentration in the layer was about 100 times higher than that in the electron case. The annealing behavior of complexes was essentially the same as that in the electron case with minor differences.