Premium
Back Cover: Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes (Phys. Status Solidi B 2/2013)
Author(s) -
Schiavon Dario,
Binder Michael,
Peter Matthias,
Galler Bastian,
Drechsel Philipp,
Scholz Ferdinand
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201390004
Subject(s) - auger effect , diode , quantum efficiency , light emitting diode , optoelectronics , photoluminescence , wavelength , band gap , materials science , auger , quantum well , wave function , spontaneous emission , range (aeronautics) , recombination , physics , optics , atomic physics , chemistry , laser , composite material , biochemistry , gene
If the ABC model is accepted as a valid tool to analyze the internal quantum efficiency of GaInN/GaN light‐emitting diodes, the high‐current efficiency must be roughly proportional to the ratio B/C 2/3 between the coefficients B and C , which correlate radiative and Auger‐like recombination rate with the carrier density. The low efficiency of green diodes compared to blue diodes implies therefore a decreasing B/C 2/3 ratio with decreasing bandgap energy. In this study (see the article by Schiavon et al. on pp. 283–290 ), the recombination rate coefficients were measured in single‐quantum‐well light‐emitting diodes spanning the entire blue‐green spectral range. The figure shows the coefficient B corrected for the varying wavefunction overlap as a function of bandgap energy, while the inset shows the photoluminescence of UX:3 chips with different wavelengths. The decrease of B/C 2/3 is mostly caused by the decrease of B rather than by the increase of C . Furthermore, a good agreement between the coefficients C of this work and those calculated elsewhere from first principles is found, supporting the conclusion that Auger recombination is the main cause of the high C in GaInN layers.