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Atomistic origin of rapid crystallization of Ag‐doped Ge– S b– T e alloys: A joint experimental and theoretical study
Author(s) -
Prasai B.,
Kordesch M. E.,
Drabold D. A.,
Chen G.
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201370560
Subject(s) - extended x ray absorption fine structure , crystallization , materials science , doping , octahedron , ab initio , tetrahedron , crystallography , ab initio quantum chemistry methods , absorption spectroscopy , absorption (acoustics) , crystal structure , molecule , optoelectronics , chemistry , optics , thermodynamics , physics , organic chemistry , composite material
Ge–Sb–Te (GST) alloys that lie near the pseudobinary GeTe–Sb 2 Te 3 tie line are widely used phase‐change memory materials (PCMM) for application in optical and electronic memory. Prasai et al. employed extended X‐ray absorption fine structure (EXAFS) analyses and ab initio molecular dynamics (AIMD) to investigate the structural properties of Ag‐doped GST alloys. The investigation (pp. 1785–1790 ) demonstrates that the computer models are consistent with EXAFS experiments. The study reveals that Ag‐doping promotes the conversion of Ge from tetrahedral to octahedral, and enhances the speed of crystallization of GST, a key to its utility as a PCMM.