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Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties
Author(s) -
Geurts Jean
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350410
Subject(s) - raman spectroscopy , raman scattering , semiconductor , phonon , materials science , spectroscopy , cadmium telluride photovoltaics , monolayer , doping , electric field , condensed matter physics , optoelectronics , optics , nanotechnology , physics , quantum mechanics
This review focuses on the analysis of buried semiconductor interfaces by Raman spectroscopy, i.e. inelastic light scattering. Simultaneous access to structural and electronic properties can be obtained by employing phonon Raman scattering, induced by deformation potential, or alternatively by the electric‐field induced Fröhlich mechanism, as well as Raman scattering from coupled plasmon–LO‐phonon modes. Structural information may comprise intermixing, reactivity, strain and interfacial atomic bond sequences. The main electronic properties derived from Raman spectroscopy are the doping levels of the constituent layers, the interfacial electric field strengths and the free‐carrier depletion layer widths. Attention is paid also to the possibility of in situ growth monitoring by Raman spectroscopy. Examples of semiconductor interface analysis are presented for heterovalent interfaces between II–VI and III–V semiconductors, especially ZnSe/GaAs(001) and CdTe/InSb(001), as well as for heavily strained CdTe monolayers, embedded in a BeTe epilayer on GaAs(001).