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Fabrication of SnS quantum dots for solar‐cell applications: Issues of capping and doping
Author(s) -
Rath J. K.,
Prastani C.,
Nanu D. E.,
Nanu M.,
Schropp R. E. I.,
Vetushka A.,
Hývl M.,
Fejfar A.
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350377
Subject(s) - quantum dot , chalcogenide , passivation , solar cell , materials science , optoelectronics , indium , fabrication , quantum dot solar cell , doping , multiple exciton generation , nanotechnology , band gap , layer (electronics) , engineering physics , polymer solar cell , physics , medicine , alternative medicine , pathology
We present our recent study of SnS particles in the backdrop of significant developments that have taken place so far for which a review of the present status of this material, its structural, optical, electronic characteristics, and device performance is described. To further improve the performance of low‐cost chalcogenide‐based solar cells, we propose to employ a third‐generation solar cells fabrication scheme, where an intermediate bandgap layer can be incorporated in a CIS solar cell to increase its current generation and efficiency. For this purpose SnS quantum dots (QD) embedded indium sulfide (In 2 S 3 ) layer is developed. We address how to cap the QD surface for defect passivation and protection from ambient and the doping nature of the particles.