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Ultrafast spin dynamics in magnetic wide‐bandgap semiconductors
Author(s) -
Raskin Maxim,
Stiehm Torsten,
Cohn Alicia W.,
Whitaker Kelly M.,
Ochsenbein Stefan T.,
de Vasconcellos Steffen Michaelis,
Brandt Martin S.,
Gamelin Daniel R.,
Bratschitsch Rudolf
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350239
Subject(s) - spintronics , magnetic semiconductor , condensed matter physics , dephasing , faraday effect , semiconductor , band gap , materials science , spin (aerodynamics) , magnetic field , spin polarization , ultrashort pulse , electron , physics , optoelectronics , ferromagnetism , optics , laser , quantum mechanics , thermodynamics
Magnetic wide‐bandgap semiconductors based on ZnO and GaN are promising for spintronics applications and interesting for studying the interaction of charge carriers with magnetic ions. We use time‐resolved Faraday rotation spectroscopy to investigate the ultrafast spin dynamics in Zn 1− x Mn x O and Ga 1− x Mn x N. The mean field electron–magnetic ion exchange constant is determined by measuring the transient effective g ‐factor ( g *) for these materials. The relevant scattering processes are revealed by analyzing the ensemble spin dephasing timeT 2 * .