Premium
Magnetotransport and magnetization dynamics of GaMnAs thin films and magnetic tunnel junctions
Author(s) -
Hamida Aymen Ben,
Sievers Sibylle,
Bergmann Florian,
Racu AnaMaria,
Bieler Mark,
Pierz Klaus,
Schumacher Hans Werner
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350210
Subject(s) - condensed matter physics , ferromagnetic resonance , magnetization dynamics , magnetometer , magnetoresistance , materials science , thin film , ferromagnetism , tunnel magnetoresistance , magnetization , magnetic field , physics , nanotechnology , quantum mechanics
We describe the comprehensive characterization of GaMnAs epitaxial thin films and magnetic tunnel junctions (MTJ) by complementary techniques ranging from high‐resolution imaging to magnetometry, magnetotransport, time‐resolved magneto‐optics, and coplanar broadband ferromagnetic resonance (FMR). Magnetometry and magnetotransport on macroscopic samples allow deriving the saturation magnetization and quasi‐static reversal fields. Perpendicular transport experiments on patterned MTJ pillars further reveal the tunneling magnetoresistance ratio. Additionally the precessional dynamics are characterized by time‐resolved magneto‐optics and broadband network analyzer FMR yielding the effective Gilbert damping and the sample anisotropies. The combination of the different techniques allows a comprehensive characterization of the key magnetostatic and dynamic material parameters of GaMnAs‐based thin films and devices.