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All‐electrical detection of spin Hall effect in semiconductors
Author(s) -
Ehlert Markus,
Song Cheng,
Ciorga Mariusz,
Hupfauer Thomas,
Shiogai Junichi,
Utz Martin,
Schuh Dieter,
Bougeard Dominique,
Weiss Dieter
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350206
Subject(s) - spin hall effect , hall effect , condensed matter physics , spin (aerodynamics) , semiconductor , inverse , quantum hall effect , physics , materials science , engineering physics , optoelectronics , spin polarization , electrical resistivity and conductivity , quantum mechanics , magnetic field , mathematics , electron , geometry , thermodynamics
Since the prediction of the spin Hall effect more than 40 years ago, significant progress was made in theoretical description as well as in experimental observation, especially in the last decade. In this article, we present three different concepts and measurement geometries for all‐electrical detection of the direct and the inverse spin Hall effect in semiconductors. Based on experiments with n‐ and p‐doped GaAs microstructures, we describe our experimental approaches and methods to experimentally identify the spin Hall effect and compare our results to previous experiments and theoretical considerations. Device geometry for the detection of the direct spin Hall effect.