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Determination of polar C‐plane and nonpolar A‐plane Al N / G a N heterojunction band offsets by X‐ray photoelectron spectroscopy
Author(s) -
Li Huijie,
Liu Xianglin,
Sang Ling,
Wang Jianxia,
Jin Dongdong,
Zhang Heng,
Yang Shaoyan,
Liu Shuman,
Mao Wei,
Hao Yue,
Zhu Qinsheng,
Wang Zhanguo
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350199
Subject(s) - heterojunction , wurtzite crystal structure , x ray photoelectron spectroscopy , valence band , materials science , optoelectronics , polarization (electrochemistry) , spectroscopy , wide bandgap semiconductor , polar , band gap , chemistry , physics , nuclear magnetic resonance , zinc , quantum mechanics , astronomy , metallurgy
We have directly measured the valence‐band offsets (VBOs) of wurtzite C‐plane and A‐plane AlN/GaN heterojunctions by X‐ray photoelectron spectroscopy. The VBOs were determined to be 0.82 ± 0.15 and 0.63 ± 0.15 eV for the C‐plane and A‐plane AlN/GaN heterojunctions, respectively. The discrepancy in VBOs of heterojunctions with different orientations is mainly due to the spontaneous polarization effect. The VBO of the nonpolar heterojunction is closer to the intrinsic value since the A‐plane samples show no polarization effects.