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Thin Ge– S e films as a sensing material for radiation doses
Author(s) -
Ailavajhala Mahesh S.,
Nichol Tyler,
GonzalezVelo Yago,
Poweleit Christian D.,
Barnaby Hugh J.,
Kozicki Michael N.,
Butt Darryl P.,
Mitkova Maria
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350188
Subject(s) - chalcogenide , raman spectroscopy , materials science , thin film , scanning electron microscope , spectroscopy , chalcogenide glass , diffraction , diffusion , irradiation , radiation , optoelectronics , analytical chemistry (journal) , optics , nanotechnology , chemistry , composite material , physics , chromatography , quantum mechanics , thermodynamics , nuclear physics
This work focuses on the study of Ge rich phases in the Ge–Se chalcogenide glass system. Radiation induced effects particularly related to Ag diffusion in the glasses under the influence of different doses of γ radiation are investigated and documented. Raman spectroscopy, X‐ray diffraction, energy dispersive X‐ray spectroscopy, scanning electron microscopy, and atom force microscopy confirmed the occurrence of radiation‐induced Ag diffusion and oxidation of the hosting chalcogenide thin films. This causes Ag surface deposition and structural reorganization of the hosting backbone, and affects the electrical performance of the films. It is suggested that the sensing ability of the thin films can be substantially influenced by the encapsulating the sensing elements to avoid the oxidation of the chalcogenide film.