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Chalcogenide systems at the border of the glass‐formation domain: A key for understanding the memory‐switching phenomena
Author(s) -
Popescu Mihai,
Velea Alin,
Sava Florinel,
Lőrinczi Adam
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350104
Subject(s) - chalcogenide , ternary operation , materials science , domain (mathematical analysis) , key (lock) , phase (matter) , nanotechnology , chemical physics , computer science , optoelectronics , chemistry , mathematics , mathematical analysis , computer security , organic chemistry , programming language
The compositions in the ternary chalcogenide systems from the demarcation region between the glass‐formation domain (GFD) and the partially or fully crystalline formation domain seem to exhibit outstanding properties. We have shown in this paper that the compositions with the best memory‐switching properties are situated at the border of the GFD in many systems. One can use this correlation to find new phase‐change materials with better switching properties or to discover GFDs that were not observed yet.