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Manipulating spin beam splitter by electric field in hybrid ferromagnetic–Schottky‐stripe and semiconductor nanostructure
Author(s) -
Ma WenYue,
Lu MaoWang,
Cao XueLi,
Li Shuai,
Ji LaiKui
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350088
Subject(s) - spintronics , spin polarization , condensed matter physics , electric field , heterojunction , schottky diode , ferromagnetism , materials science , spin hall effect , schottky barrier , splitter , spin transistor , spin (aerodynamics) , beam splitter , optoelectronics , semiconductor , polarization (electrochemistry) , physics , electron , optics , chemistry , quantum mechanics , laser , diode , thermodynamics
Recently, a spin beam splitter, which operates via the Goos–Hänchen (GH) effect of electrons, was fabricated by depositing ferromagnetic and Schottky metal stripes on top of a semiconductor heterostructure. To explore effective manipulation of its spin polarization of GH shifts, we introduce a transverse electric field into the device. Theoretical analysis and numerical simulation show that both magnitude and sign of the spin polarization are related closely to this electric field. Thus, this spin beam splitter can be used as an electrically controllable spin‐polarized source for spintronics applications.