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Electron and hole traps in X‐ray irradiated Y 2 S i O 5 and Lu 2 S i O 5 crystals
Author(s) -
Kärner T.,
Laguta V.,
Nikl M.,
Zazubovich S.
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350028
Subject(s) - irradiation , luminescence , doping , ion , materials science , electron , analytical chemistry (journal) , x ray , crystal (programming language) , thermal stability , recombination , radiochemistry , atomic physics , chemistry , optoelectronics , optics , physics , nuclear physics , biochemistry , organic chemistry , chromatography , computer science , gene , programming language
Characteristics of thermally stimulated luminescence (TSL) are studied for the X‐ray irradiated at 4, 80, or 295 K nominally undoped Y 2 SiO 5 and Lu 2 SiO 5 single crystals of different origin, containing traps for holes (Ce 3+ , Tb 3+ ions) and electrons (Eu 3+ , Mo 6+ ions), as well as for the Sm 3+ ‐doped Lu 2 SiO 5 crystal. For the first time, the TSL glow curves of these materials are measured separately for the electron (Ce 3+ ‐, Tb 3+ ‐related) and hole (Sm 3+ ‐, Eu 3+ ‐related) recombination luminescence. Owing to that, the TSL peaks, arising from thermal destruction of electron centers and hole centers, are separately identified. For some TSL peaks, thermal stability parameters of the corresponding traps are calculated. The results are compared with those obtained for Ce 3+ ‐doped Y 2 SiO 5 and Lu 2 SiO 5 crystals.