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Spin disorder scattering in a ferromagnetic insulator‐on‐graphene structure
Author(s) -
Savin H.,
Kuivalainen P.,
Lebedeva N.,
Novikov S.
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201350024
Subject(s) - condensed matter physics , ferromagnetism , graphene , scattering , materials science , weak localization , exchange interaction , spins , electron , spin (aerodynamics) , physics , magnetoresistance , magnetic field , nanotechnology , quantum mechanics , optics , thermodynamics
We theoretically study the transport properties of a single graphene layer between two insulating materials, i.e., a ferromagnetic EuO thin film and a nonmagnetic SiC substrate. An exchange interaction between the charge carrier spins in graphene and the localized magnetic moments in the ferromagnetic insulator is assumed. This proximity effect and the large spin fluctuations at temperatures close to the ferromagnetic transition temperature T C lead to spin disorder scattering, which is calculated using a Green's function technique. Numerical results indicate that at temperatures close to T C the contribution of the spin disorder scattering to the total electron mobility is clearly observable even in the case of a weak exchange interaction and a low background mobility of the graphene layer. This enables the experimental determination of the exchange interaction parameter using the present model and a simple resistivity measurement.