Premium
Electronic properties of E3 electron trap in n‐type ZnO
Author(s) -
Chicot Gauthier,
Pernot Julien,
Santailler JeanLouis,
Chevalier Céline,
Granier Carole,
Ferret Pierre,
Ribeaud Alexandre,
Feuillet Guy,
Muret Pierre
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201349261
Subject(s) - penning trap , electric field , deep level transient spectroscopy , conduction band , electron , ionization , materials science , ionization energy , atomic physics , trap (plumbing) , band gap , vacancy defect , doping , spectroscopy , chemistry , condensed matter physics , optoelectronics , physics , ion , nuclear physics , organic chemistry , quantum mechanics , meteorology
Deep level transient spectroscopy measurements were performed on three non‐intentionally doped n‐type ZnO samples grown by different techniques in order to investigate the electronic properties of E3 electron trap. The ionization energy and the capture cross‐section are found respectively at 0.275 eV from the conduction band and 2.3×10 ‐16 cm 2 with no electric field dependence. This center is present irrespective of the synthesis method. In view of its physical properties and recent works published in the literature, its physical origin is discussed. Based mainly on its insensibility to the macroscopic electric field, the best candidates turn out to be dual defects with opposite charges on adjacent sites, like the dual vacancy V O –V Zn .