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Planar Hall effect of the Fe 3 S i epitaxial films with different in‐plane configurations on Mg O substrates
Author(s) -
Guo B. L.,
Li P.,
Jin C.,
Liu H.,
Bai H. L.
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201349193
Subject(s) - planar , epitaxy , condensed matter physics , materials science , magnetic field , plane (geometry) , field (mathematics) , sputtering , hall effect , homogeneous space , thin film , domain (mathematical analysis) , geometry , physics , nanotechnology , mathematics , mathematical analysis , layer (electronics) , pure mathematics , computer graphics (images) , quantum mechanics , computer science
Fe 3 Si films with (001), (112), and (011) c ‐axis orientations were grown on MgO(001), (011), and (111) substrates by sputtering, respectively. The epitaxial relationship of the Fe 3 Si films on MgO was verified by X‐ray diffractions (XRDs) with θ −2 θ and ϕ scans. All the planar Hall resistance (PHR) curves of the Fe 3 Si films with different orientations show a nearly sinusoidal behavior at high fields ( H ≥ 100 Oe). When the magnetic field is below 100 Oe, the planar Hall effect (PHE) lineshapes of the Fe 3 Si(001) and Fe 3 Si(112) films deviate from the sin2 θ M function and show abrupt switching patterns. Meanwhile, the curves of PHE of the Fe 3 Si(011) film show triangle shape. The PHE at high fields can be interpreted by single domain magnetic moments reversal models. The different low‐field PHEs in the Fe 3 Si films were explained by multi‐domain magnetic properties and different in‐plane epitaxial configurations, which are closely correlated to the relation between the in‐plane symmetries of the films and substrates.