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Introduction and annealing of primary defects in proton‐bombarded n‐GaN
Author(s) -
Schmidt Matthias,
de Meyer Hannes,
Johan Janse van Rensburg Pieter,
Ernst Meyer Walter,
Danie Auret Francois
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201349191
Subject(s) - annealing (glass) , primary (astronomy) , materials science , proton , optoelectronics , physics , composite material , nuclear physics , astrophysics
We report on in situ space charge spectroscopy measurements on low‐temperature 1.6Me V proton‐bombarded n‐type gallium nitride thin film samples. The scope of this study was to investigate the introduction and annealing dynamics of radiation‐induced lattice damage. Using optical excitation allowed for the detection of electronic defect states in the entire GaN bandgap and to detect unstable primary defects that would have been invisible in thermal space charge spectroscopic measurements. The introduction of compensating acceptor‐like primary defects by the bombardment was observed and manifested as a decrease in the sample capacitance. After the bombardment the concentrations of deep‐levels and acceptor states were monitored by deep‐level transient spectroscopy and photo‐capacitance measurements while the temperature was increased. It was found that annealing and reactions of primary bombardment‐induced defects occurs even below room‐temperature which might account for the radiation‐hardness of GaN.