Investigation on photoluminescence properties of Ce O  2 / S m 2  O  3  multilayer films based on Si substrates | Zendy

Li L. | Zendy; Wang S. W. | Zendy; Mu G. Y. | Zendy; Yin X. | Zendy; Tang Y. | Zendy; Duan W. B. | Zendy; Yi L. X. | Zendy

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Investigation on photoluminescence properties of Ce O 2 / S m 2 O 3 multilayer films based on Si substrates

Author(s) -

Li L.,

Wang S. W.,

Mu G. Y.,

Yin X.,

Tang Y.,

Duan W. B.,

Yi L. X.

Publication year - 2014

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.201349096

Subject(s) - photoluminescence , materials science , annealing (glass) , oxidizing agent , analytical chemistry (journal) , luminescence , thin film , photoluminescence excitation , wafer , ion , evaporation , optoelectronics , nanotechnology , metallurgy , chemistry , physics , organic chemistry , chromatography , thermodynamics

CeO 2 /Sm 2 O 3 multilayer films were deposited on p‐type Si wafers by e‐beam evaporation technology. Four typical photoluminescence peaks of Sm 3+ ions located around 572, 615, 656, and 719 nm were observed after the samples were annealed in an oxidizing atmosphere at high temperature. The luminescence properties of CeO 2 :Sm 3+ films were characterized by excitation, emission spectra, and decay curves. In addition, a study of the effects of Sm 2 O 3 thickness and annealing time on the samples' photoluminescence was conducted.

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