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Investigation on photoluminescence properties of Ce O 2 / S m 2 O 3 multilayer films based on Si substrates
Author(s) -
Li L.,
Wang S. W.,
Mu G. Y.,
Yin X.,
Tang Y.,
Duan W. B.,
Yi L. X.
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201349096
Subject(s) - photoluminescence , materials science , annealing (glass) , oxidizing agent , analytical chemistry (journal) , luminescence , thin film , photoluminescence excitation , wafer , ion , evaporation , optoelectronics , nanotechnology , metallurgy , chemistry , physics , organic chemistry , chromatography , thermodynamics
CeO 2 /Sm 2 O 3 multilayer films were deposited on p‐type Si wafers by e‐beam evaporation technology. Four typical photoluminescence peaks of Sm 3+ ions located around 572, 615, 656, and 719 nm were observed after the samples were annealed in an oxidizing atmosphere at high temperature. The luminescence properties of CeO 2 :Sm 3+ films were characterized by excitation, emission spectra, and decay curves. In addition, a study of the effects of Sm 2 O 3 thickness and annealing time on the samples' photoluminescence was conducted.