Premium
Anisotropic low‐field electron diffusion coefficient and mobility in wurtzite indium nitride
Author(s) -
Wang Shulong,
Liu Hongxia,
Yang Zhaonian
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201349085
Subject(s) - wurtzite crystal structure , condensed matter physics , effective mass (spring–mass system) , diffusion , indium nitride , materials science , effective diffusion coefficient , anisotropy , grain boundary diffusion coefficient , indium , electron mobility , electron , nitride , optoelectronics , thermodynamics , optics , physics , grain boundary , zinc , nanotechnology , composite material , microstructure , metallurgy , medicine , radiology , layer (electronics) , quantum mechanics , magnetic resonance imaging
This paper presents the theoretical analysis of anisotropic low‐field electron diffusion coefficient and mobility in wurtzite (WZ) indium nitride (InN). The electron diffusion coefficient and mobility as functions of temperature and doping concentration are investigated in detail. For low concentration, the diffusion coefficient and mobility is higher at low temperature. However, the results are opposite for high concentration. The anisotropy of the band structure is also taken into consideration by a Herring–Volt transform. The diffusion coefficient and mobility in the Γ – A direction ( c ‐direction) is higher than that in the Γ – M direction (basal plane) for a smaller effective mass.