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Raman spectroscopy investigation of defect occurrence in graphene grown on copper single crystals
Author(s) -
Frank Otakar,
Vejpravova Jana,
Kavan Ladislav,
Kalbac Martin
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201300065
Subject(s) - graphene , raman spectroscopy , chemical vapor deposition , materials science , copper , g band , analytical chemistry (journal) , single crystal , nanotechnology , crystallography , chemistry , optics , physics , chromatography , metallurgy
The presented study focuses on the appearance of defects in graphene grown on Cu(100), (110) and (111) single crystals by low pressure chemical vapour deposition (CVD) from methane with either 12 C or 13 C isotope. By analysing the Raman D band, we assume the defects originate mainly on boundaries between tilted graphene domains grown on Cu(100) and Cu(110), in contrast to graphene grown on Cu(111), where the D band is scarce in the Raman spectra. The other main source of defects may come from graphene edges around small adlayers randomly present in the samples.