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Synthesis and characterization of core–shell Zn O / Z n S e nanowires grown by MOCVD
Author(s) -
Amiri Gaëlle,
Souissi Ahmed,
Hanèche Nadia,
Vilar Christèle,
Lusson Alain,
Sallet Vincent,
Galtier Pierre
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201300011
Subject(s) - wurtzite crystal structure , nanowire , materials science , transmission electron microscopy , metalorganic vapour phase epitaxy , sapphire , epitaxy , scanning electron microscope , raman spectroscopy , chemical vapor deposition , selected area diffraction , nanotechnology , crystallography , optoelectronics , zinc , chemistry , optics , laser , composite material , physics , layer (electronics) , metallurgy
ZnO/ZnSe core/shell nanowire arrays have been grown by metal‐organic chemical vapor deposition on c ‐plane sapphire. The morphology and the structure of the nanostructures were characterized by scanning electron microscopy and transmission electron microscopy. They exhibit well‐aligned core/shell ZnO/ZnSe nanowires with a good crystalline quality although some surface roughness is associated to the deposition of ZnSe on the lateral ZnO facets. X‐ray diffraction combined with Raman spectroscopy and electron diffraction demonstrate that ZnO grows along the c ‐axis with the wurtzite (W) structure, but ZnSe can be deposited epitaxially in the zinc‐blende (ZB) structure on the M‐facet of the wires. Optical transmission measurements reveal an additional contribution at about 2.15 eV attributed to the type‐II interfacial transition between the valence band of ZB‐ZnSe and the conduction band of W‐ZnO. These observations confirm the potential interest of ZnO/ZnSe core/shell nanostructures for photovoltaic applications.