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Disorder in order: silicon versus graphene
Author(s) -
Popescu Mihai,
Sava Florinel,
Lőrinczi Adam,
Velea Alin
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201248516
Subject(s) - graphene , silicon , materials science , condensed matter physics , semiconductor , crystalline silicon , topology (electrical circuits) , amorphous silicon , crystal structure , amorphous solid , nanotechnology , crystallography , physics , chemistry , optoelectronics , mathematics , combinatorics
The topological transition from order to disorder in crystalline silicon was investigated by a computer simulation procedure. The gradually introduction of topological Wooten–Winer–Weaire defect states makes the crystal change in a more and more disordered assembly of atoms. The characterization of deformation energy around a single defect state is analyzed. The topological transition from graphene structure to an amorphous carbon layer, by introduction of a high number of Stone–Wales defect‐type states was evidenced. The comparison of the disordered structure in tetrahedrally bonded semiconductors (silicon) and a two‐dimensional network based on graphene structure was made.