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THz photoconductivity in a‐Si:H
Author(s) -
Shimakawa Koichi,
Wagner Tomas,
Frumar Miloslav
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201248510
Subject(s) - photoconductivity , terahertz radiation , mesoscopic physics , semiconductor , optoelectronics , materials science , amorphous solid , radio frequency , physics , optics , condensed matter physics , chemistry , telecommunications , crystallography , computer science
Although the steady‐state secondary photoconductivity in amorphous semiconductors is fairly well understood, photocarrier transport with a subpicosecond time resolution (the THz region in the frequency domain) is still not clear. The frequency response of short‐lived photocarriers in the THz region is discussed in a‐Si:H here. It is shown that THz‐photoconductivity is highly influenced by the mesoscopic inhomogeneity (10‐nm scale) originating from potential fluctuations. This behavior is basically the same as observed in the radio‐frequency (RF) range.