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Premium Hybrid InGaN/CdZnO quantum well structures for optoelectronic applications in the short wavelength spectral region
Author(s)
Park SeoungHwan,
Ahn Doyeol
Publication year2013
Publication title
physica status solidi (b)
Resource typeJournals
PublisherWILEY‐VCH Verlag
Abstract Spontaneous emission characteristics of hybrid In x Ga 1 −  x N/Cd 0.05 Zn 0.95 O quantum well (QW) structures were theoretically investigated by using multi‐band effective mass theory. The transition wavelength of the InGaN/CdZnO QW structure is shown to be changed from 415 to 580 nm when the In content x is varied from 0.1 to 0.3. The conventional InGaN/GaN QW structure shows that its peak intensity linearly decreases with increasing peak wavelength. On the other hand, the InGaN/CdZnO QW structure shows that the spontaneous emission coefficient reaches a maximum at around the peak wavelength of 0.484 µm, which corresponds to x  = 0.2. This can be explained by the fact that, in a range of the short peak wavelengths, the InGaN/CdZnO QW structure has a very shallow potential well. In a range of the longer peak wavelengths above 0.47 µm, the InGaN/CdZnO QW structure is expected to have a larger spontaneous emission peak than the InGaN/GaN QW structure. This can be explained by the fact that the former has a reduced internal field compared to the latter.
Subject(s)laser , materials science , optics , optoelectronics , physics , quantum well , wavelength
Language(s)English
SCImago Journal Rank0.51
H-Index109
eISSN1521-3951
pISSN0370-1972
DOI10.1002/pssb.201248469

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