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Interpretation of experimental dependencies of the switching effect in Ge S b T e
Author(s) -
Bogoslovskiy Nikita
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201248435
Subject(s) - chalcogenide , ohmic contact , materials science , interpretation (philosophy) , semiconductor , exponential function , threshold voltage , ionization , nonlinear system , voltage , condensed matter physics , optoelectronics , nanotechnology , physics , computer science , quantum mechanics , mathematics , ion , mathematical analysis , layer (electronics) , transistor , programming language
An electronic–thermal model of the switching effect in chalcogenide glassy semiconductors (CGSs) is investigated. The model fits the experimental current–voltage characteristics (CVC) of GeSbTe films in both the ohmic and exponential regions. Also, the model is in good agreement with the experimental dependences of threshold voltage and threshold current on temperature and thickness. The results indicate that multiphonon tunnel ionization (MTI) of negative‐U centers and heating is a possible mechanism for the CVC nonlinearity and the switching effect in chalcogenides.