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Strain profiles and radii of semiconductor rolled‐up tubes made by a single material
Author(s) -
Laniel Dominique,
Shtinkov Nikolay
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201248387
Subject(s) - materials science , heterojunction , radius , layer (electronics) , composite material , substrate (aquarium) , semiconductor , residual stress , strain (injury) , condensed matter physics , optoelectronics , medicine , oceanography , physics , computer security , computer science , geology
Single‐material rolled‐up microtubes provide an opportunity to study the processes of strain relaxation and defect formation near the interface of strained‐layer semiconductor heterostructures. We study theoretically tubes formed by a single strained Si layer grown beyond the critical thickness on a Ge substrate. The residual strain accumulated in the Si layer causes the layer to roll after it is released from the substrate by etching. Computer simulations are carried out using Keating's valence force field method, with uniform and non‐uniform residual (initial) strain profiles and different strained layer widths. We show that the radius of the tubes is affected by a combination of these two factors and thus by the total elastic deformation present before rolling, a larger total deformation resulting in a smaller tube radius. However, uniform and non‐uniform residual strain profiles can be easily distinguished by analyzing the final profiles of the azimuthal and the radial strain components.