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Carrier trapping and recombination in TlGaSe 2 layered crystals
Author(s) -
Grivickas Vytautas,
Odrinski Andrei,
Bikbajevas Vitalijus,
Gulbinas Karolis
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201248363
Subject(s) - trapping , recombination , stacking , acceptor , electron , materials science , diffusion , carrier lifetime , crystal (programming language) , absorption (acoustics) , molecular physics , spectroscopy , analytical chemistry (journal) , atomic physics , chemistry , optoelectronics , condensed matter physics , silicon , physics , ecology , biochemistry , organic chemistry , chromatography , quantum mechanics , biology , computer science , composite material , gene , programming language , thermodynamics
In nominally undoped layered TlGaSe 2 crystals the trapping centers have been investigated by photo‐induced current transient spectroscopy (PICTS). Five acceptor and donor traps have been detected. Quite large magnitudes of capture cross‐sections for donor traps at 0.23 and 0.45 eV have been determined. The depth‐resolved free‐carrier absorption (FCA) technique has been applied for the investigation of the majority hole lifetime, τ R , at 295 and 77 K. The pronounced τ R reduction with increasing injection level is attributed to the trapping effect of the minority electrons which provides a way of estimating trap centers concentration. A moderate τ R variation across layer planes is observed but no carrier diffusion related to the recombination on the external crystal surfaces is detected. Moreover, abnormally sharp τ R drop is found for carrier concentration above 10 17 cm −3 . The possibility of excess hole and electron special separation due to compositional stacking faults and the successive their enhanced recombination at high excess carrier concentrations is discussed.