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Raman and photoluminescence studies of transitions of quantum‐confined acceptors
Author(s) -
Huang HaiBei,
Zheng WeiMin,
Cong WeiYan,
Meng XiangYan,
Zhai JianBo
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201248293
Subject(s) - raman spectroscopy , photoluminescence , excited state , exciton , ground state , acceptor , doping , quantum well , spectral line , materials science , molecular physics , molecular beam epitaxy , atomic physics , chemistry , condensed matter physics , laser , epitaxy , optics , optoelectronics , physics , nanotechnology , layer (electronics) , astronomy
The internal transitions of Be acceptors confined in the center of GaAs/AlAs multiple quantum wells are investigated by Raman and photoluminescence (PL) spectra. A series of Be δ‐doped GaAs/AlAs multiple quantum wells with doping at the well center and well widths ranging from 30 to 200 Å were grown on (100) GaAs substrates by molecular beam epitaxy. Both the Raman and PL spectra were measured at 4 and 20 K, respectively. The confined longitudinal optical (LO) modes, and transitions of Be acceptors from the 1S 3/2 ( Γ 6 ) ground state to 2S 3/2 ( Γ 6 ) first excited state were clearly observed in Raman spectra. Two‐hole transitions of the acceptor‐bound excitons from the 1S 3/2 ( Γ 6 ) ground state to the 2S 3/2 ( Γ 6 ) first excited state were also observed. It is found that the experimental results in the Raman spectra are close to those measured in the PL experiments.