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Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes
Author(s) -
Schiavon Dario,
Binder Michael,
Peter Matthias,
Galler Bastian,
Drechsel Philipp,
Scholz Ferdinand
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201248286
Subject(s) - auger effect , materials science , light emitting diode , wavelength , diode , metalorganic vapour phase epitaxy , recombination , optoelectronics , voltage droop , dislocation , silicon , sapphire , optics , auger , laser , physics , atomic physics , epitaxy , chemistry , nanotechnology , biochemistry , layer (electronics) , voltage , quantum mechanics , composite material , voltage divider , gene
Abstract The recombination rate coefficients (RRCs) A , B , and C in MOVPE‐grown single‐quantum‐well light emitting diodes spanning the entire blue‐green spectral range are determined by fitting efficiency curves and differential carrier lifetimes. The results show definite trends for each of the RRCs: A tendentially decreases with increasing wavelength, B definitely decreases, and C remains approximately constant. Therefore, the increase of the droop with increasing wavelength (the green gap problem) is rather due to the decrease of B than an increase of C . The determined values of C are shown to be similar to what has been predicted by others with first‐principles computer simulations accounting for phonon‐assisted Auger recombination. Samples grown on sapphire and silicon substrates are compared and show significant differences only for the RRC A , presumably due to the difference in threading dislocation density.