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Spin‐current rectification in the presence of spin‐flip in a quantum dot using temperature bias
Author(s) -
Tagani M. Bagheri,
Soleimani H. Rahimpour
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201248153
Subject(s) - condensed matter physics , spin polarization , spin flip , spin hall effect , spin (aerodynamics) , quantum tunnelling , ferromagnetism , biasing , spinplasmonics , quantum dot , materials science , physics , optoelectronics , voltage , electron , optics , quantum mechanics , scattering , thermodynamics
Abstract We analyze spin‐dependent transport through a spin‐diode in the presence of spin‐flip and under influence of temperature bias. The current polarization and the spin accumulation are investigated in detail by means of reduced density matrix. Results show that the spin accumulation is linearly increased when the metallic electrode is warmer whereas, its behavior is more complicated when the ferromagnetic lead is warmer. Spin‐flip causes that the current polarization becomes not only a function of spin‐flip rate but also a function of temperature. The current polarization is reduced up to 90% if the time of spin‐flip is equal to the tunneling time. The behavior of spin‐dependent current is also studied as a function of temperature, spin‐flip rate, and polarization.