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Solid‐state formation of ferromagnetic δ‐Mn 0.6 Ga 0.4 thin films with high rotatable uniaxial anisotropy
Author(s) -
Myagkov V. G.,
Zhigalov V. S.,
Bykova L. E.,
Bondarenko G. N.,
Mikhlin Yu. L.,
Patrin G. S.,
Velikanov D. A.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201248064
Subject(s) - anisotropy , materials science , ferromagnetism , crystallite , annealing (glass) , thin film , condensed matter physics , magnetic anisotropy , solid state , crystallography , magnetization , magnetic field , optics , metallurgy , chemistry , nanotechnology , physics , quantum mechanics
Solid‐state reactions in Ga/Mn polycrystalline films of the composition 1 Ga:3 Mn were experimentally investigated. Our X‐ray study showed that the formation of the Ga/Mn → (250 °C) ϕ‐Ga 7.7 Mn 2.3 → (350 °C) δ‐Mn 0.6 Ga 0.4 phase sequence occurs when the annealing temperature is increased to 400 °C. δ‐Mn 0.6 Ga 0.4 samples were found to have high rotatable uniaxial anisotropy. We also showed that magnetic fields with coercivities above H > H C = 8.3 kOe can be used to orient the easy anisotropy axis in any spatial direction while taking the angle of the lag into account.