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Indications of a magnetic‐field‐driven anisotropy in the hybridization gap semiconductor CeOs 4 As 12
Author(s) -
Cichorek Tomasz,
Bochenek Lukasz,
Wawryk Ryszard,
Henkie Zygmunt
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200785
Subject(s) - condensed matter physics , skutterudite , anisotropy , semiconductor , electrical resistivity and conductivity , electron , band gap , magnetic field , ground state , materials science , conduction band , physics , atomic physics , optics , optoelectronics , thermoelectric materials , quantum mechanics
The filled skutterudite compound CeOs 4 As 12 displays phenomena that are associated with hybridization between the 4f‐electron and conduction‐electron states. This holds especially true for a semiconducting ground state with a main energy gap as small as Δ / k B = 45 K. When subjected to magnetic field, the hybridization gap semiconductor CeOs 4 As 12 becomes metallic below around 2.5 K. Preliminary electrical‐resistivity experiments provide evidence for an anisotropy of magnetic‐field‐induced insulator–metal transition in this cubic material. Our findings suggest a contribution of the quartet $4{\rm f \hbox{-} }\Gamma _{67}^{- } $ states to transport properties of CeOs 4 As 12 .