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Terahertz‐induced exciton signatures in semiconductors
Author(s) -
Böttge C. N.,
Koch S. W.,
Schneebeli L.,
Breddermann B.,
Klettke A. C.,
Kira M.,
Ewers B.,
Köster N. S.,
Chatterjee S.
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200704
Subject(s) - terahertz radiation , exciton , semiconductor , physics , ionization , terahertz spectroscopy and technology , condensed matter physics , nonlinear system , optoelectronics , quantum mechanics , ion
This paper discusses recent studies involving time‐resolved optical and terahertz (THz) fields in the linear and nonlinear regime. An overview of the microscopic modeling scheme is presented and applied to analyze a variety of experimental results. The examples include coherent excitons in weak and strong THz fields, Rabi splitting and ionization of intra‐excitonic transitions, THz studies in semiconductor microcavities, and the THz manipulation of excitonic transitions.