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High‐pressure study of the thermoelectric properties of various oxides (ZnO, Ti 2 O 3 , Fe x O y ) and FeAs‐based compounds
Author(s) -
Morozova Natalia V.,
Khmeleva Iuliia A.,
Ovsyannikov Sergey V.,
Karkin Alexander E.,
Shchennikov Vladimir V.
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200668
Subject(s) - seebeck coefficient , materials science , thermoelectric effect , semiconductor , thermoelectric materials , oxide , electronic structure , electrical resistivity and conductivity , condensed matter physics , band gap , analytical chemistry (journal) , metallurgy , thermodynamics , thermal conductivity , chemistry , composite material , optoelectronics , physics , chromatography , quantum mechanics
In the present work the results of investigation of the thermoelectric (TE) properties of some Zn, Ti and Fe oxides and FeAs‐based compounds under compression up to 20 GPa are reported. The data obtained of thermoelectric power S dependence on pressure P for the materials under consideration revealed some new features of the electron properties of both initial and high‐pressure phases (RS‐ZnO). For FeAs‐based compounds the complex behavior of S on P was found depending probably on the contribution of d‐states in the conductivity. The decreasing of the semiconductors gap has been established under pressure for the narrow‐gap semiconductors Ti 2 O 3 and Fe 2 O 3 ; the sign inversion being observed in the first oxide pointing to the change of dominant type of the charge carries. Pressure cycling of Fe 2 O 3 led to a nanostructured state with the modified electronic properties. TE data at high pressure allowed the electronic properties of the materials with the different type of the electron structure to be detailed.